Monthly Progress Report - April 1997 for Contract Number N00014-95-C-2022 (M/A-COM Microelectronics Div. Lowell, MA),

Abstract

The objective of this program is the development and demonstration of a viable SiGe power HBT device design and associated processes that will demonstrate >1 Watt of output power at 6 and 8 GHz.

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Document Details

Document Type
Technical Report
Publication Date
May 12, 1997
Accession Number
ADA325779

Entities

People

  • B. A. Ziegner

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accumulators
  • Amplifiers
  • Crystals
  • Epitaxial Growth
  • Fabrication
  • Film Resistors
  • Films
  • Measurement
  • Military Research
  • Power Amplifiers
  • Pull Tests
  • Resistance
  • Resistors
  • Single Crystals
  • Test And Evaluation
  • Thin Film Resistors
  • Thin Films

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science.
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics