Luminescence Properties of Rare Earth Doped Semiconductors.
Abstract
This is the final report for an AASERT grant funding John Torvik, Ph.D. The report consists of the Ph.D. dissertation that came from this research. The work addresses the behavior of the rare earth erbium (Er) doped into GaN, with co-dopants oxygen and fluorine. The Er luminescence properties were studied versus temperature (10K, 77K, and up to room temperature), annealing treatment (number of anneals, duration, and temperature), co-dopant concentration (over three orders of magnitude), and the Er density. Co-dopants were essential to the successful detection of luminescence in the 1550 nm (4I13/2- 4I15/2) band. An annealing treatment following the ion implantation of the Er and co-dopant ions was also required. Photoluminescence lifetime data versus Er density, pump wavelength, and temperature are presented. Photoluminescence excitation (PLE) spectroscopy over the wavelength range 770-1010 nm using a tunable Ti:Sapphire laser, at 77K and room temperature, showed the usual thermal quenching for most pump wavelengths, but not all. A metal-insulator-n-type diode structure also exhibited 1550 nm luminescence. Cathodo-luminescence measurements showed weak 980 nm luminescence while the PLE measurements did not. A list of publications and presentations related to this work is also included.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1996
- Accession Number
- ADA325828
Entities
People
- Jacques I. Pankove
- John Torvik
- Robert J. Feuerstein
Organizations
- University of Colorado Boulder