Growth and Structure of MBE-Deposited Iridium Silicide.

Abstract

We were able to form pure Tr-Si3 films at temperatures as low as 450 deg C, which is almost 200 deg C lower than previously reported. With our MBE growth techniques we also found a previously-unreported c-axis epitaxial IrSi3 growth mode at 700 deg C, found that the IrSi3 epitaxy on Si (111) was dominated by a Mode B orientation which had not previously been reported in the literature, as well as showed that the epitaxial growth of IrSe3 on was superior to that on Si(100).

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1996
Accession Number
ADA326192

Entities

People

  • Charles M. Falco

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Structure
  • Crystallites
  • Crystals
  • Detection
  • Detectors
  • Diffraction
  • Electron Diffraction
  • Electron Microscopy
  • Epitaxial Growth
  • Focal Plane Arrays
  • Focal Planes
  • Infrared Detectors
  • Materials
  • Orientation (Direction)
  • Transmission Electron Microscopy
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.