Research on Silicon-Based Optical Devices.

Abstract

Research on the development of infrared detectors using germanium silicon alloys is reported. Structures have been grown using ultra high vacuum chemical vapor deposition (UHV/CVD). Heterojunction internal photoemission structures have been fabricated and characterized. The results suggest that background limited performance will be obtained at 40 K and below for long wave infrared (LWIR) operation. Work on multiple quantum well structures has also been completed and is summarized in the report. Remaining issues concern process integration and some progress is reported toward development of a silicide ohmic contact process to these structures. The growth of relaxed buffer layers and short period superlattices have also been explored. Most of the results so far have been on short period superlattices. Characterization by X-ray diffraction and Raman has been performed.

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Document Details

Document Type
Technical Report
Publication Date
May 29, 1997
Accession Number
ADA326240

Entities

People

  • D. W. Greve

Organizations

  • Carnegie Mellon University

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors
  • Space

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Detection
  • Detectors
  • Diffraction
  • Heterojunctions
  • High Vacuum
  • Infrared Detectors
  • Long-Wavelength Infrared Radiation
  • Mass Spectrometry
  • Materials
  • Materials Processing
  • Quantum Wells
  • Scattering
  • Spectra
  • Vapor Deposition
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing