In-Situ Testing of Radiation Effects on VLSI Capacitors Using the NPS Linear Accelerator.

Abstract

The study of radiation effects on VLSI components is a very heavily researched topic. There are several reasons for this research, one of which is the application of VLSI components to space related vehicles. One component essential to Analog VLSI elements is the capacitor. The purpose of this paper is to better define the actual effects of radiation on the MOS VLSI capacitor. The radiation testing is conducted using the NPS electron linear accelerator. The data is taken while the capacitor is being exposed to an accumulating dose of electron radiation. The capacitance values are monitored using the parameter changes of a specially designed low pass filter circuit. The 3 dB breakpoint frequency of this filter is used to calculate the actual capacitance. The capacitance value is then related to the accumulated radiation dose in Rads. The results are very important and needed, especially if off-the-shelf components are to be utilized in the design of spacecraft systems.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1996
Accession Number
ADA326761

Entities

People

  • Duane Salsbury

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Space

DTIC Thesaurus Topics

  • Capacitance
  • Capacitors
  • Electrons
  • Filters
  • Linear Accelerators
  • Low Pass Filters
  • Radiation
  • Radiation Effects

Fields of Study

  • Engineering

Readers

  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster