Low Temperature Reactions for the Preparation of Group 13-15 Materials from Organo-gallium(I) and -indium(I) Compounds.

Abstract

The reactions of pentamethylcyclopentadienylin-dium(I) In(C5Me5) with white phosphorus (P4) at 175 deg C and of neopentylgallium(I) Ga(CH2CMe3)n with P4 at 350- 400 deg C and with NH3 at 460-480 deg C in sealed tubes provide routes to indium phosphide, gallium phosphide and hexagonal gallium nitride, respectively. The formation of these group 13-15 materials as black solids was confirmed by their X-ray photoelectron spectra, X-ray powder diffraction patterns and physical properties. The other products were (C5Me5)2 in the case of the reaction of In(C5Me5) with P4, neo- pentane and H2 in the case of the Ga(CH2CMe3)n - NH3 reaction, and unidentified hydrocarbons and H2 in the case of Ga(CH2CMe3)n - P4. These products were isolated and identified by 1H NMR spectroscopy or their physical properties, as appropriate. Carbon contamination in all materials was indicated by their XPS spectra and confirmed by combustion analysis.

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Document Details

Document Type
Technical Report
Publication Date
Dec 06, 1997
Accession Number
ADA326889

Entities

People

  • Jeffrey F. Lees
  • Matthew J. Noble
  • O. T. Beachley Jr.

Organizations

  • University at Buffalo

Tags

Communities of Interest

  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Alkanes
  • Chemical Synthesis
  • Chemistry
  • Combustion
  • Compound Semiconductors
  • Contamination
  • Diffraction
  • Films
  • Hydrocarbons
  • Low Temperature
  • Materials
  • Military Research
  • New York
  • Physical Properties
  • Spectra
  • Spectroscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Organic Chemistry
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene