Atomic Layer Control of Thin Film Growth Using Binary Reaction Sequence Chemistry,

Abstract

Our research is focusing on the atomic layer control of thin film growth. Our goal is to deposit films with precise control of thickness and conformality on both flat and high aspect ratio structures. Atomic layer control of growth is crucial for many technologies that require nanoscale deposition techniques to fabricate ultrathin and conformal films with thicknesses from 10-100 A. Examples of these films are ultrathin gate oxides, high dielectric constant films, conformal transparent conducting layers and ultrathin diffusion barriers.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1997
Accession Number
ADA327210

Entities

People

  • Steven M. George

Organizations

  • University of Colorado Boulder

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Advanced Materials
  • Aluminum Oxides
  • Chemical Kinetics
  • Chemical Vapor Deposition
  • Chemistry
  • Dielectric Permittivity
  • Dielectrics
  • Films
  • High Temperature
  • Materials
  • Materials Processing
  • Materials Science
  • Rocky Mountains
  • Surface Chemistry
  • Surface Reactions
  • Thin Films
  • Vapor Deposition

Fields of Study

  • Materials science
  • Physics

Readers

  • Thin Film Deposition Science.