Sub Tenth Micron CMOS Devices - A Demonstration of the Virtual Factory Approach to New Structure Design.

Abstract

The parent program 'Semiconductor Manufacturing For the 21st Century' has focused on showing the power of a 'Virtual Factory' operating in parallel with a computer controlled 'Programmable Factory'. This project is exploring the use of advanced TCAD simulation tools to design a candidate 21st century MOS device - a fully-depleted surrounding gate vertical MOSFET with self-aligned drain contact. The structure is a vertical MOSFET built in an etched silicon pillar. It has been built at much larger dimensions (1 micron) and shows significant promise of being scalable to very small dimensions. The project uses the 'Virtual Factory' to design the device and before actual fabrication in the lab at Stanford to test the correspondence between the simulation results and the actual experimental results.

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Document Details

Document Type
Technical Report
Publication Date
Aug 29, 1995
Accession Number
ADA327344

Entities

People

  • James D. Plummer

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Assembly
  • Compound Semiconductors
  • Computers
  • Demonstrations
  • Electronics
  • Fabrication
  • Lithography (Fabrication)
  • Manufacturing
  • Semiconductor Manufacturing
  • Semiconductors
  • Simulations
  • Simulators
  • Solid State Electronics

Readers

  • Integrated Circuit Design and Technology.
  • Political Science/ International Relations/ European Studies

Technology Areas

  • Microelectronics