Low Temperature Materials Growth and Processing Development for Flat Panel Display Technology Applications.
Abstract
A thin catalyst film of nickel (0.4 nm thick) on a silicon substrate was reduced in hydrogen at 875 deg C for 30 minutes. Carbon nanotubes were subsequently grown at 950-1000 deg C in less than 5 minutes. A more uniform electron emission was obtained in the vacuum testing station, compared to previous nanotube preparation techniques. Also the Fowler-Nordheim plots were more reproducible.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1995
- Accession Number
- ADA327508
Entities
People
- C. N. Berglund