Optimization of Properties of a New Material for Electronic and Magnetic Applications.
Abstract
The molecular beam epitaxy (MBE) system is being prepared for the preparation of manganese arsenide/gallium arsenide (MnAs/GaAs) composite films. The chamber has been evaluated for quality of the vacuum: A pressure in the 10(exp -8) Torr range was obtained within hours without bakeout. The bakeable all metal valve connected to the turbo pump was found to leak through the valve seating when the valve was closed. Repairs are being made on the chamber and on the Boostivac ion pump controller. Drawings have been prepared for the effusion cells in the molecular beam source. Professor Tamargo has agreed to provide access to her commercial MBE system to produce large are MnAs/GaAs samples. The effusion cells are available for deposition and it will be possible to exactly reproduce the deposition conditions of Rothberg and Harbison's work that was cited in the SBIR proposal. SKION will utilize AES, RHEED and LEED to provide in situ analysis to establish optimal growth parameters.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 14, 1997
- Accession Number
- ADA327529
Entities
People
- Jack Olsen
- Steven Kim