MBE Growth of GaInAsSb.

Abstract

Optimum growth conditions for high quality growth of GaAs, GaSb, InSb and GaInAsSb epilayers by Molecular Beam Epitaxy (MBE) on GaAs substrates and homoepitaxial growth of InSb have been determined. A new procedure for expeditious removal of oxide desorption from InSb has been found. InSb epilayers grown on InSb substrate after the above oxide desorption exhibited x-ray rocking curve with full width half maxima of 13 arc-sec, reproducibly. Efforts of our research have also been devoted to aspects of material characterization. Low temperature photoreflectance (PR) of Te- doped GaSb has been used to determine the transition energy of spin-orbit split component of the fundamental band gap. Temperature dependence of this transition energy has been determined. These are the first PR reports on GaSb. Theoretical calculations of a novel InAsSb/InT1Sb superlattice structure lattice-matched to InSb indicated a type I band alignment, with optical band gap in the long-wavelength region.

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Document Details

Document Type
Technical Report
Publication Date
Jul 23, 1997
Accession Number
ADA328229

Entities

People

  • Shanthi N. Iyer

Organizations

  • North Carolina Agricultural and Technical State University

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Detection
  • Detectors
  • Energy Bands
  • Energy Gaps
  • Infrared Detectors
  • Low Temperature
  • Materials
  • Measurement
  • Optical Properties
  • Physical Properties
  • Transition Temperature
  • Transitions
  • Warning Systems
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Space