Light-BEEM Technology: A Local Probe of Metal Semiconductor Interfaces.
Abstract
This final report describes an experimental system aimed studying a novel characterization method of metal-semiconductor interfaces which combines ballistic electron emission microscopy (BEEM) with optical excitations. The idea is that the spreading resistance, or space charge, associated with the ballistic electrons injected into the Schottky barrier by the tip of a scanning tunneling microscope (STM), can be modulated by optical excitation. The local photoresponse can therefore be mapped spatially across the barrier, below the metal electrode into which the STM is tunneling. The proposed technology will also enable one to directly measure the lifetime of the photoexcited carriers below the metal electrode, using short laser pulses at different wavelengths. The experimental system has been built, BEEM images acquired, and 1(V) curved measured. Lack of sufficient finding led to the termination of the project.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 13, 1997
- Accession Number
- ADA328302
Entities
People
- Dror Sarid
Organizations
- University of Arizona