Trivalent Phosphors for ACTFEL Applications.
Abstract
The original goal of this ASSERT research program was to extend our alternating-current thin-film electroluminescent (ACTFEL) device physics research in a new direction; namely, exploration of the potential of several classes of phosphor materials (trivalent oxides, nitrides, and oxynitrides) deposited by rf magnetron sputtering for ACTFEL thin-film display applications. This goal was modified to the exploration of certain divalent and trivalent nitrides such as CaSiN2:Eu and AlInN2:Tm for ACTFEL phosphor applications. This goal redirection is motivated by the perceived superior electron injection and transport properties of nitrides compared to oxides or oxynitrides. In order to achieve this goal, many modifications of the rf sputtering system and of the sputter target preparation system and handling procedure were undertaken. Additionally, a significant portion of the research effort was devoted to the development of high-quality insulators. The last phase of this research program was devoted to rf sputtering of ZnS:Tb phosphors in order to confirm that the sputter system is performing as desired and to test the viability of N acceptor doping as a means of improving the performance of sulfur-based ACTFEL phosphors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 09, 1997
- Accession Number
- ADA328365
Entities
People
- J. F. Wager
Organizations
- Oregon State University