1.5 Micron Wavelength Optical Devices Grown by Gas Source Molecular Beam Epitaxy.

Abstract

The purpose of this program was to demonstrate the integration of InP-based lasers and other optical devices using a simple, platform integration technology. During this program, we successfully implemented the novel concept of a twin waveguide structure with loss layer which demonstrated nearly 50% coupling between the active laser devices and the integrated waveguide. This coupling, which is cavity-length independent, allows for the integration of lasers, optical amplifiers, waveguides and modulators on a single epitaxial structure.

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Document Details

Document Type
Technical Report
Publication Date
Aug 07, 1997
Accession Number
ADA328675

Entities

People

  • Stephen R. Forrest

Organizations

  • Princeton University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Circuits
  • Couplings
  • Current Density
  • Energy Transfer
  • Epitaxial Growth
  • Fabrication
  • High Gain
  • Integrated Circuits
  • Losses
  • Materials
  • Modulators
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Photonic Integrated Circuits
  • Semiconductors
  • Waveguides

Fields of Study

  • Materials science
  • Physics

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy