Use of Ballistic-Electron-Emission Microscopy to Study Mechanisms for Long Wavelength Schottky-Barrier Infrared Detectors.
Abstract
In this final report, we have summarized our work in five areas. The first area, covered in Sec. I, is the development of calcium fluoride tunnel barriers which may be used to increase the operating temperature of PtSi SBIRDs. In particular, we have demonstrated a new technique for growth of exactly two monolayers of CaF2 on Si(l 11) substrates. In Sec. II, we describe our work with ballistic electron emission microscopy to determine electron scattering processing in thin metal layers and at metaliSi interfaces. During this contract, we constructed an in-situ STM/BEEM system which allowed us to make measurements directly on PtSi and Pt surfaces without having to protect these surfaces from oxidation. Our preliminary results with this instrument are described in Sec. III. Sec. IV describes the theoretical model we have developed which explains why the Fowler-like behavior typically observed in the photoresponse for many Schottky-barrier metal/semiconductor interfaces does not prove that crystal momentum parallel to the interface is conserved. In Sec. V, we describe the Monte-Carlo program that we have developed to model ballistic electron scattering in this metal layers and across the metal/semiconductor interface. Initial results demonstrate that electron (or hole) scattering at the metal/semiconductor interface may, in fact, be the dominant transmission mechanism for most (nonpitaxial) metal/semiconductor systems.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1997
- Accession Number
- ADA329441
Entities
People
- L. J. Schowalter
Organizations
- Rensselaer Polytechnic Institute