High Power, Broadband, Linear, Solid State Amplifier.

Abstract

A1GaN/GaN MODFET's grown by MBE and OMVPE with less than 25, micrometers gate lengths, yield up to 50 and 100 GHz for fk and fmax respectively. A substantial effort on circuits for combining power, including both direct power combining and traveling wave combining has been started, along with experimental studies of large pheriphery devices. A new analytical model for the effect of dislocations on electron mobility has been made, and electron transport in III-nitrides has been studied using the Monte Carlo method. Epitaxial growth on SiC and sapphire is being carried out by both MBE and OMVPE, and studied by high resolution STEM. Bulk crystallites 250 micrometers in diameter, have been grown and will be used as seeds for growth of larger boules.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1997
Accession Number
ADA329609

Entities

People

  • B. Green
  • K. Chu
  • Lester F. Eastmen
  • Michael J. Murphy
  • N. Weimann

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Electron Mobility
  • Electronics Industry
  • Electronics Laboratories
  • Epitaxial Growth
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • High Resolution
  • Modules (Electronics)
  • Monte Carlo Method
  • Semiconductors
  • Thermal Conductivity
  • Transport Properties
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Microwave Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics