In-Situ Studies of Metal on III-V Semiconductors

Abstract

Research has been performed using high resolution electron microscopy under ultra-high vacuum (UHV) conditions on a number of metal semiconductor systems. The new system combining classical surface characterization techniques and growth has been installed on a UHV microscope and fully tested. The growth at the monolayer level of Au and Ay on Si (001) has been studied combining XPS and electron microscopy. Studies of the growth of Au on both air introduced and Ga-rich GaAs (001) substrates have been performed. A variety of new methodologies and techniques have been developed, most notably atomic scale imaging of surfaces at a higher level than previously possible and new methods of determining surface structures just from electron (or x-ray) diffraction data. Electron microscopy studies of MoS2 lubricant films are also described.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1997
Accession Number
ADA329760

Entities

People

  • Laurence D. Marks

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics
  • Biomedical

DTIC Thesaurus Topics

  • Advanced Materials
  • Diffraction
  • Electron Microscopes
  • Electron Microscopy
  • Electrons
  • Films
  • High Resolution
  • High Vacuum
  • Lubricants
  • Materials
  • Materials Science
  • Materials Testing
  • Microscopes
  • Microscopy
  • Semiconductors
  • Transmission Electron Microscopy
  • Vacuum

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene