Ballistic Electron Emission Spectroscopy Study of Transport through Semiconductor Quantum Wells and Quantum Dots
Abstract
This report summarizes the development and use of Ballistic Electron Emission Microscopy (BEEM) for nondestructive, local characterization of semiconductor heterostructures under AFOSR grant No. F49620-94-1-0378. The technique has been applied for measuring heterojunction band offsets, for studying band structure effects in electron tunneling through double barrier resonant tunneling structures, and for imaging current flow through buried mesoscopic structures such as quantum dots (approx. 10nm in size) and misfit dislocations 80nm below the surface. Monte Carlo simulations of the transport have also been performed. The results suggest that BEEM is a powerful new low energy electron microscopy for materials physics study on the nm scale.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1997
- Accession Number
- ADA329782
Entities
People
- Venkatesh Narayanamurti
Organizations
- University of California, Santa Barbara