Plasma Immersion Ion Implantation Process for Semiconductor Fabrication. Linear & Reentrant Crossed-Field Amplifiers for in situ Measurements, Comparisons with Numerical Simulations and Study of Noise Mechanisms.

Abstract

We have performed in situ measurements in two low frequency CFAs to study several basic physics issues which may lead to CFA noise reduction. Our measurements include the local radio-frequency (RF) fields, electron density profiles, electron energy distributions and noise spectrums in both the linear CFA and the reentrant CFA. Comprehensive electron density measurements of the interaction region as well as parametric comparisons such as gain versus sole voltage, beam current and frequency have been used to benchmark two computer simulation codes, MASK and NESSP.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1996
Accession Number
ADA329788

Entities

People

  • Chung Chan
  • Jiahui Ye

Organizations

  • Northeastern University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Spectra
  • Chemical Reactions
  • Composite Materials
  • Computer Simulations
  • Electron Density
  • Electron Energy
  • Electrons
  • Energy
  • Fabrication
  • Frequency
  • Frequency Bands
  • Ion Implantation
  • Measurement
  • Noise Reduction
  • Radio Frequency
  • Simulations
  • Three Dimensional

Fields of Study

  • Physics

Readers

  • Computational Fluid Dynamics (CFD)
  • Electronics Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics