Development of Advanced Electronic Materials and Devices for Ultra-Low 1/f Noise and Low Leakage Current Applications
Abstract
This report contains practical applications of the Quantum 1/f Effect, theory development, and contributions not directly based on quantum 1/f noise. The application to quartz resonators was improved by the inclusion of crystal defects in the calculation, and was generalized to the case of low-Q and SAW devices. The generalization is important, introducing the notion of incoherence between quantum 1/f fluctuations of the phonon loss rate in various regions of the crystal. The applications also include calculation of quantum 1/f noise in gallium nitride. It is 3-10 times lower in GaN than in GaAs. The theory was reformulated on the basis of the new negative conditional quantum entropy concept explaining the apparent entropy production in 1/f noise by simultaneous production of negative-entropy soft photon states. A long-standing conceptual difficulty is eliminated on this basis of tremendous importance is the discovery during this grant of a new method connecting the coherent and conventional quantum 1/f effects. A mass distribution was found which allows to find the quantum 1/f noise in general. A method of gate current suppression in HFET and a two-dimensional all-optical TDM system were studied.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 15, 1997
- Accession Number
- ADA329816
Entities
People
- Peter H. Handel