Femtosecond Laser Probing of Non-Thermal Electronic Transport. AASERT Program.
Abstract
The goal of this research effort has been the application of high intensity THz pulses, generated by a large aperture planar photoconducting transmitter, in studying nonlinear phenomena in GaAs and Si. The ultimate interest in this is a better understanding of the response of free carriers in semiconductors to high electric fields, a subject of great importance in modern electronic devices. The THz generator offers the capability of producing a peak electric field in the range of 100 kV/cm, well into the range of high-field, hot carrier phenomena. In addition, due to the short duration of this pulse, the dynamics of carriers in high fields may be studied directly in the time domain, using the powerful techniques developed for femtosecond laser spectroscopy experiments. At high fields, carrier velocities become nonlinear in applied field. This forms the basis for the expectation of a nonlinear response of a doped semiconductor to a high intensity THz pulse passing through it.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1997
- Accession Number
- ADA330571
Entities
People
- Jeffrey Bokor
Organizations
- University of California, Berkeley