Analysis of Quantum Effects in Non-Uniformly Doped MOS Structures

Abstract

This paper presents results from the self-consistent solution of Schrodinger and Poisson equations obtained in one-dimensional non-uniformly doped MOS structures suitable for the fabrication of very short transistors. Different issues are considered and investigated, including quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-to-channel capacitance. The reported results give indications for the optimization of n-MOS channel doping profiles suitable for the fabrication of ultra-short MOSFETs.

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Document Details

Document Type
Technical Report
Publication Date
Sep 23, 1997
Accession Number
ADA331495

Entities

People

  • Antonio Abramo
  • Claudio Fiegna

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Capacitance
  • Conduction Bands
  • Electric Fields
  • Electron Density
  • Electron Energy
  • Electrons
  • Energy
  • Energy Levels
  • Equations
  • Fermi Levels
  • Free Electrons
  • Inversion
  • Mobility
  • Simulations
  • Simulators
  • Surface Roughness
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Calculus or Mathematical Analysis
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing