Optimization of Channel Profiles for Ultra-Short MOSFETs by Quantum Simulation,

Abstract

In this paper, the self-consistent solution of 1-D Poisson and Schrodinger equations is performed on doping profiles suitable for the fabrication of advanced ultra-short n-MOSFETs. Different issues are considered and investigated, including quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-to-channel capacitance. The reported results give indications for the optimization of n-MOS channel doping profiles. In addition, the more advanced double-gate structure is analyzed and the reasons for possible advantages over more conventional single-gate ones (either SOI- or bulk-type) are investigated.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1996
Accession Number
ADA331496

Entities

People

  • Antonio Abramo
  • Claudio Fiegna

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Case Studies
  • Charge Density
  • Degradation
  • Electric Fields
  • Electron Density
  • Electron Energy
  • Electrons
  • Epitaxial Growth
  • Equations
  • Inversion
  • Mobility
  • Optimization
  • Quantum Phenomena
  • Scattering
  • Simulations
  • Thickness

Readers

  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing