IN and SB Based III-V Microstructures with Novel Electronic Properties.
Abstract
The focus of this research project was to investigate the basic properties of InAs/GaInSb interfaces and how those properties effect the control of growing abrupt interfaces. STM and SIMS studies showed that InAs grown on GaSb tends to be less abrupt because the GaAs bond strengths are stronger than in GaSb. The As in InAs exchanges with underlying Ga atoms, while the displaced Sb is incorporated in the InAs. Atomic-layer epitaxy at higher temperatures tends to yield smoother interfaces. Electron spectroscopy for chemical analysis (ESCA) was used to detennine band offsets at !nAs/GaSb interfaces; the offset was 90 meV higher for InAs on GaSb than for the reversed order. The end result was an imn,roved recine for high-quality structures for infrared devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 16, 1997
- Accession Number
- ADA331625
Entities
People
- T. C. Mcgill
Organizations
- California Institute of Technology