Vapour Phase Growth of Thick Monocrystalline GaN Epitaxial Layers by Sandwich-Method
Abstract
The basic investigations leading to the fabrication of thick (more than 0.2 mm) monocrystalline layers of GaN on the silicon carbide substrates are performed. GaN layers were grown by sublimation sandwich-method in ammonia atmosphere. GaN polycrystalline powder and metallic Ga were used as a vapor source. The growth was carried out in quartz reactors both horizontal, and vertical types, in furnaces with high-frequency heating. The possibility of growing of thick monocrystalline GaN layers at growth temperature range from 1200 to 1230 deg C without preliminary deposition of buffer layers with very high rates up to 1 mm/h is shown.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1997
- Accession Number
- ADA331761
Entities
People
- A. D. Roenkov
- E. N. Mokhov
- M. E. Boiko
- P. G. Baranov
- Yu. A. Vodakov