New Pnictinogallanes H2GaE(SiMe3)23 (E = P, As) - Formation, Structural Characterization, and Thermal Decomposition to Afford Nanocrystalline GaP and GaAs
Abstract
The new compounds, H2GaE(SiMe3)23, E = P (1), As (2), the first authenticated examples of a phosphinogallane and an arsinogallane, containing the GaH2 moiety, are prepared via efficient dehydrosilylation from the respective combinations of H3Ga.NMe3 and E(SiMe3)3 in diethyl ether or toluene. Compounds 1 and 2 are characterized by elemental analysis, NMR, IR, and mass spectrometry. Single-crystal X-ray structural studies show that the molecular structures of 1 and 2 feature a flattened six-member ring of alternating Ga and E centers. Both compounds are reasonably stable at -30 deg C but spontaneously decompose at ambient temperatures, 2 noticeably faster than 1, with the evolution of HSiMe3, H2, and E(SiMe3)3. The pyrolysis of 1 yields nanocrystalline GaP while the pyrolysis of solids from decayed 2 results in nanocrystalline GaAs as determined from XRD studies. Under applied pyrolysis conditions, the thermally accelerated dehydrosilylation of the precursors is accompanied by a side-evolution of CH4 and retention of small quantities of amorphous Si/C phases.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 24, 1997
- Accession Number
- ADA331934
Entities
People
- A. L. Rheingold
- I. A. Guzei
- J. F. Janik
- R. L. Wells
- V. G. Young
Organizations
- Duke University