Low-Temperature Grown III-V Semiconductors

Abstract

A new approach for n-type modulation doping in In-based heterostructures is proposed where intrinsic defects from low-temperature (LT) grown InP are utilized to provide charge carriers without an external shallow impurity doping source The success of this approach is demonstrated by results from InGaAs/LT-InP heterostructures, where doping is provided by P(In) antisites, introduced during off stoichiometric LT growth of InP. Photoluminescence in a magnetic field and Shubnikov de Haas oscillations are applied for characterizing the electronic structure and recombination mechanisms. The efficiency of electron transfer and quantum mobility of a two dimensional electron gas formed near the heterointerface is shown to be much higher as compared to traditional extrinsic doping

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1997
Accession Number
ADA332147

Entities

People

  • Charles W. Tu

Organizations

  • University of California, San Diego

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • California
  • Charge Carriers
  • Electron Gas
  • Electron Holes
  • Electron Transfer
  • Electronic Materials
  • Electronics
  • Electrons
  • Heterojunctions
  • Low Temperature
  • Magnetic Fields
  • Modulation
  • Optical Detection
  • Oscillation
  • Photoluminescence
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing