Monte Carlo Simulation of Mercury Cadmium Telluride

Abstract

We derived basic equations for basic electron scattering processes in narrow band gap semiconductors. However even in the case when the relaxation time approximation can be introduced a set of cumbersome integrals has to numerically calculated for intermediate degeneracy of an electron gas which is characteristic for narrow band gap semiconductors at liquid nitrogen temperature. As to the scattering by optical phonons the standard relaxation time approximation is, in general, not applicable.

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Document Details

Document Type
Technical Report
Publication Date
Sep 16, 1997
Accession Number
ADA332550

Entities

People

  • B. Gelmont
  • Michael S. Shur

Organizations

  • University of Virginia

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Compound Semiconductors
  • Crystal Lattice Vibrations
  • Electron Gas
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • Monte Carlo Method
  • Narrow Band Gap Semiconductors
  • Power Electronics
  • Quasiparticles
  • Relaxation Time
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Two Dimensional

Fields of Study

  • Materials science
  • Physics

Readers

  • Calculus or Mathematical Analysis
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics