Measurement of the Linewidth Enhancement Factor at High Excitation Levels

Abstract

We have undertaken the first systematic investigation of the impact of the quantum well epitaxial structure on the alpha-parameter in broad-area quantum well lasers. Modal gain, carrier-induced refractive index change, and a parameter have been measured in quantum wells of varying width, depth, and material composition using four structures: 60 A and 500 A GaAs quantum wells, referred to as 'narrow' and 'wide', and 60 A InGaAs wells with AlGaAs barriers of two different aluminum concentrations giving 'shallow' and 'deep' wells.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1997
Accession Number
ADA332585

Entities

People

  • S. R. J. Brueck

Organizations

  • University of New Mexico

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Amplifiers
  • Current Density
  • Data Acquisition
  • Electronic Mail
  • Emission Spectra
  • Energy Levels
  • Laser Diodes
  • Lasers
  • Materials
  • New Mexico
  • Optoelectronic Devices
  • Quantum Well Lasers
  • Quantum Wells
  • Refractive Index
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Quantum Computing