Mechanisms of Semiconductor Dry Etching by Translationally Hot Atoms and Molecules
Abstract
A three year program of study was performed to investigate the effect of kinetic energy on etching. Both electron cyclotron resonance plasmas and inductively coupled radio frequency plasmas were investigated to determine the kinetic energies and source gas cracking of species in the plasmas. Studies were performed to measure the kinetic energy dependence of chlorine sticking to Si(100). Thermal etching studies of Si(100) by chlorine were completed using a novel single photon ionization method to detect SiCl and SiCl2 radical species directly.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1997
- Accession Number
- ADA332623
Entities
People
- Stephen R. Leone
Organizations
- JILA