In-Situ UHV Low Temperature Ballistic-Electron-Emission Microscope for nm-Scale Imaging and Spectroscopy of Novel Compound Semiconductor Materials
Abstract
This report summarizes the status of development, under DURIP grant number F4962O-96-1-0390, of a new in situ, UHV low temperature Ballistic Electron Emission Microscope (BEEM) for study of localized transport through metal semiconductor heterostructures. The apparatus has been developed as planned in phases. Phase 1, which involves the development of UHV BEEM capability at room temperature, is fully functional at UCSB, and is yielding excellent BEEM imaging data. Phase II, which involves low temperature operation (Liquid N2) is also installed at UCSB and is in final stages of testing. Phase Ill, which involves an in situ evaporation chamber, is in final stages of assembly at Surface/Interface Inc. The UHV BEEM data already show that this will provide a unique materials characterization capability for electronic materials researchers at UCSB.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1997
- Accession Number
- ADA332833
Entities
People
- Venkatesh Narayanamurti
Organizations
- University of California, Santa Barbara