Mid-Infrared Diode Lasers on III-V Alloys for the Spectral Range 3-3.5 Microns Operating Near Room Temperature

Abstract

This report results from a contract tasking Russian Academy of Sciences as follows: The contractor will investigate new physical approaches for designing middle infrared diode lasers operating near room temperature in the spectral range 3-3.5 microns. The contractor will employ two different approaches improved laser structures based on InAsSb/InAsSbP alloys and non-traditional tunnel laser structures. The contractor will compare the performance of the various types of the diode lasers developed in the US. The contractor will deliver one interim report and one final report. The contractor will also deliver at least one broad stripe laser demonstrating high power and at least one laser demonstrating high temperature (near room temperature) operation.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1997
Accession Number
ADA333443

Entities

People

  • Yury Yakovlev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Electronics Laboratories
  • Energy Bands
  • Fermi Levels
  • Frequency Combs
  • High Temperature
  • Infrared Lasers
  • Laser Applications
  • Laser Diodes
  • Lasers
  • Light (Electromagnetic Radiation)
  • Optics
  • Quantum Cascade Lasers
  • Quantum Efficiency
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Directed Energy