High Linearity Modulation in Quantum Wells for Analog Fiber Optic Links.
Abstract
For many RF photonic applications, low RF insertion loss, large spurious free dynamic range (SH)R) links are needed. This development program demonstrated a high saturation power (46 mW), high RF efficiency (-17.8 dB) analog semiconductor waveguide modulator based upon Franz-Keldysh Effect (FKE) modulation. This was achieved with 43 mW optical power incident to the modulator. The modulator was operated with a multi-octave SFDR of 106 dB-Hz (2/3), and a single octave SH)R of 124 dB-Hz (4/5). Also introduced is a novel, dual function operation concept for the semiconductor electroabsorption modulator for operating also as an effective photodetector. The photodetector can handle more than 20 mA of photocurrent. The behavior of a waveguide modulator based upon FKE and Quantum Confined Stark Effect to achieve high linearity modulation was also modeled and documented. A first time demonstration of high quality, strain compensated multiple quantum well InGaP/InAsP materials was accomplished. Up to one micrometer thick strained multiple quantum well regions can be grown without degradation in the optical properties of the materials.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1997
- Accession Number
- ADA334102
Entities
People
- A. L. Kellner
- Paul K. L. Yu
- Robert B. Welstand
Organizations
- University of California, San Diego