Heteroepitaxy of SiGeC on Si
Abstract
Pseudomorphic alloys of Si(1-x-y) Ge(x)C(y), with compositions ranging from x approx. 0.20 and 0.01 < or = y < or = 0.002) to x approx. 0.50 and 0.02 < or = y < 0.04) were grown by chemical vapor deposition. Films with the lower alloy compositions were grown to thickness of 750 nm without the formation of misfit dislocations at the film/substrate interface. This is a four fold increase of the critical thickness over carbon-free alloys with similar Si:Ge ratios. High resolution x-ray diffraction analysis showed all of the pseudomorphic films grown in this study to be in compression. Calculations based on Vegard's law suggested that about 50% of the carbon is compensating for strain induced by the germanium.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 08, 1997
- Accession Number
- ADA334735
Entities
People
- James W. Mayer
Organizations
- Arizona State University