SiC Discrete Power Devices-Analysis and Optimization of the Planar 6H-SiC ACCUFET; A Planar Lateral Channel SiC Vertical High Power JFET; The Planar Lateral Channel MESFET-A New SiC Vertical Power Device; Growth via Hot Wall Chemical Vapor Deposition & Characterization of 6H and 4H SiC Thin Films
Abstract
A novel planar accumulation channel SiC MOSFET structure is reported. The problems of gate oxide rupture and poor channel conductance previously reported in SiC UMOSFETs are solved by using a buried P+ layer to shield the channel region. The fabricated 6H-SiC unterminated devices had a blocking voltage of 350 V with a specific on-resistance of 18 m ohms-sq cm at room temperature for a gate bias of only 5 V. This measured specific on-resistance is within 2.5X of the value calculated for the epitaxial drift region (10(exp 16) /cucm, 10 micrometers), which is capable of supporting 1500 V. In addition, a novel planar lateral channel SiC high power JFET is described. Two-dimensional numerical simulations predicted low on-resistances with excellent current saturation and square FBSOA, which have been experimentally confirmed. A novel planar lateral channel SiC MESFET structure with vertical current flow in the drift region is also proposed and demonstrated by modeling and fabrication. A hot wall chemical vapor deposition system has been constructed for the growth and doping of 6H- and 4H-SiC thin films at very high temperatures and high growth rates. The design incorporates a separate load lock to which a growth chamber and a RHEED chamber are attached.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 15, 1998
- Accession Number
- ADA335240
Entities
People
- Bayant Jayant Baliga
- H. S. Tomozawa
- P. M. Shenoy
- Robert F Davis
Organizations
- North Carolina State University