International Conference on Indium Phosphide and Related Materials, Held in Cape Cod, Massachusetts, on 11 - 15 May 1997.

Abstract

Partial contents: Plenary Session - PLEN1 InP-Based Components for Telecom Systems in Europe; PLEN2 Advanced in InP-Based Optoelectronic Devices and Circuits for Optical Communication, Interconnection and Signal Processing; PLEN3 Unipolar Mid-Infrared Semiconductor Lasers; MA: Power Devices - MA1 Bandgap Engineered InP-Based Power Double Heterojunction Bipolar Transistor; MA2 0.9W/mm, 76% PAE (7GHz) GaInAs/InP Composite Channel HEMTS; MA3 High Power InAlAs/InGaAs/InP-HFET Grown by MOVPE; MA4 InP/InGaAs Double HBTs with High CW Power Density at 10 GHz.

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Document Details

Document Type
Technical Report
Publication Date
Jan 14, 1998
Accession Number
ADA335326

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemistry
  • Distributed Feedback Lasers
  • Electronics Industry
  • Electronics Laboratories
  • High Electron Mobility Transistors
  • Laser Applications
  • Laser Beams
  • Material Degradation Processes
  • Materials Processing
  • Materials Science
  • Materials Testing
  • Modules (Electronics)
  • Optics
  • Power Electronics
  • Radio Frequency Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Academic Conference Management
  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics