44.5 GHz PHEMT Power Amplifier

Abstract

The work described in this report represents the design phase of a gallium arsenide monolithic microwave integrated circuit (GaAs MMIC) power amplifier using pseudomorphic high electron mobility transistors (PHEMTs). The main purpose was to investigate the possible performance of a power amplifier at 44 GHz for future application in a phased array antenna system. The design of a two stage amplifier, providing over 12 dB of gain over the frequency range 43.5-45.5 GHz, is described along with the expected large signal performance. It is expected that the amplifier will provide over 20 dBm of output power. The final layout of the complete chip is also presented.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1997
Accession Number
ADA335369

Entities

People

  • Gilbert A. Morin
  • Malcom G. Stubbs
  • Scott Mclelland

Organizations

  • Communications Research Centre Canada

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Broadband
  • Circuits
  • Classification
  • Elements
  • Frequency
  • Gallium Arsenides
  • High Electron Mobility Transistors
  • Impedance
  • Microwave Integrated Circuits
  • Monolithic Microwave Integrated Circuits
  • Networks
  • Power Amplifiers
  • Security
  • Transistors
  • Transmission Lines

Fields of Study

  • Engineering

Readers

  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics