Semiconductor Laser Dynamics.
Abstract
Significant progress has been made in constructing a mathematical model of wide aperture semi-conductor lasers which simultaneously resolves multi-longitudinal mode and transverse filamentation instabilities in high brightness lasers. The original working model discussed under project 'Simulations of Broad Area Flared Amplifiers and Lasers' utilized a nonlinear gain/index model but ignored gain and index dispersion. Gain and index spectra computed microscopically for specific laser structures and including the contributions of barrier states, are fed as rational functions approximations into the laser simulation code. Using this model, we have been able, for the first time, to simulate the full space-time evolution of all the relevant optical fields and carrier density in the state-of-the-art commercial MOPA high brightness source. Our simulations, suggesting a redesign of this device for improved stability, has attracted the attention of Opto Power Corporation laser design engineers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 15, 1997
- Accession Number
- ADA335789
Entities
People
- Jerome V. Moloney
Organizations
- University of Arizona