JPRS Report, Science and Technology Japan, 3rd Microelectronics Symposium
Abstract
PARTIAL CONTENTS; Activated Metal Junction Technology for AlN/Cu System High Power Module Substrate; Application of Aluminum Nitride to Large Electric Power Insulating Substrate; Degree of Sintering, Thermal Conductivity of Aluminum Nitride Ultrafine Particles; Effect of Baking Pressure on AlN Sintering; Thick Film Resistor for Use in AlN Ceramics.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 20, 1990
- Accession Number
- ADA336241