CdF2:Er(3+)/Si(111) Heterostructure For EL Displays

Abstract

This report results from a contract tasking Institut of Applied Physics as follows: The contractor will investigate state of the art, experimental facilities and growth methods for Cdf2:Er(3+)/CaF2/Si(111) as well as (Ca, Sr, Ba)F2/Si(Ge) heterostructures for potential applications in the design and development of electroluminescent display technology. Samples of the prepared materials (2-4) will be presented to the customer as well as all of the related procedures of pretreatment, growth, and characterization. The entirety of the described work will be documented in a final report as well as interim joint papers.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1997
Accession Number
ADA336511

Entities

People

  • Sergei Pyshkin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Band Gaps
  • Compound Semiconductors
  • Contracts
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Dielectric Films
  • Dielectrics
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Materials
  • Measurement
  • Semiconductors
  • Spectra
  • Three Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.