Nanocrystalline Processing and Interface Engineering of Nitrides

Abstract

This report describes the preliminary results obtained in the study of a forced-flow reactor to synthesize nanocrystalline aluminum nitride. Variables such as starting material and the use of a nitriding plasma were examined. It was found that evaporating aluminum, rather than aluminum nitride, resulted in higher yields of material but with a higher level of unnitrided aluminum nanocrystals. The use of a microwave plasma is found to be critical to obtain high levels of nitridation. Future research includes post-nitridation of the nanocrystalline aluminum, and densification and evaluation of the nanocrystalline aluminum nitride.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1997
Accession Number
ADA336657

Entities

People

  • Jackie Y. Ying
  • Martin L. Panchula

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Advanced Materials
  • Aluminum
  • Aluminum Nitrides
  • Chemical Engineering
  • Conductivity
  • Crystals
  • Engineering
  • Materials
  • Mechanical Properties
  • Metals
  • Microwaves
  • Nitrides
  • Physical Properties
  • Silicon Carbide
  • Thermal Conductivity
  • X-Ray Diffraction

Readers

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