Real Time Control and Experimental Verification of Semiconductor Processing

Abstract

For a typical production sequence consisting of numerous steps, the resulting silicon wafers contain a large number of devices. Regardless of the nature of the device, certain parameters will vary from one device to another across the wafer surface. These variations are largely due to imperfections in the nature of the fabrication process. For example, oxide growth may not be exactly uniform from one device to another due to uneven heating of the wafer surface during processing. Doping may vary as a function of position due to the nature of the ion implantation process. Variation in a process parameter is undesirable since it results in a deviation from a resulting device parameter goal, and too much deviation can cause a device to function improperly or fail.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1997
Accession Number
ADA337647

Entities

People

  • Kostas Tsakallis
  • Michael N. Kozicki

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Algorithms
  • Control Systems
  • Coordinate Systems
  • Data Science
  • Electrical Engineering
  • Engineering
  • Information Processing
  • Information Science
  • Least Squares Method
  • Measurement
  • Normal Distribution
  • Processing Equipment
  • Semiconductor Devices
  • Semiconductors
  • Spreadsheet Software
  • Statistical Algorithms
  • Statistical Analysis

Fields of Study

  • Materials science

Readers

  • Approximation Theory.
  • Computational Modeling and Simulation
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene