Establish Methods for Crystal Growth of Si-Ge
Abstract
The SiGe alloy system will result in a whole new set of high performance electronic and optoelectronics devices, such as, thermoelectric generators, infrared detectors, and high speed optical transmitter-receivers. The production of high speed SiGe devices has been limited by thin-film alloy growth techniques which are compatible with silicon substrates. The alloy composition of thin films is limited because of strain between the substrate and the thin film. This contractual effort is aimed at producing bulk alloy SiGe crystals of uniform composition for use as substrates. These new substrates will expand the range of lattice-matched thin film alloys available for development of high speed SiGe devices. SiGe alloy electronic devices offer some advantages over III-V and II-VI compound semiconductors Their chemical and thermo-mechanical. properties will allow them to be closely compatible with established Si processing techniques and Si integrated circuits.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1997
- Accession Number
- ADA337685
Entities
People
- John S. Bailey
- Joseph A. Adamski