Nineteenth International Conference of Defects in Semiconductors.
Abstract
Emphasis will be given on the properties of wide-bandgap materials, including quantum enhancement of effective bandgaps, semiconductors (silicon and lll-V materials), plus radiation effects on detector materials. Topics will also include: GaN. Nanostructures, Large bandgap materials, defects In Epitaxial growth. selforganizing rare earth, metastable defects, pairs and complexes, defect reactions, radiation effects on detector material.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 23, 1998
- Accession Number
- ADA337844
Entities
Organizations
- University of Aveiro