High Resolution Studies of Thin Film Interfaces
Abstract
This is the final technical report for a research project that has been concerned with high resolution studies of ballistic electron transport phenomena in thin film electronic systems, and with the study of hot electron effects on such systems. The principal tool in this investigation was ballistic electron emission microscopy (BEEM), and related scanning tunnel microscopy (STM) measurements. One focus of the project was on the study of the possible effect of energetic electrons, 2 - 5 eV in energy, tunnel injected into thin film electronic materials from STM tips, in locally stimulating the formation of atomic vacancies and defects, and in the subsequent promotion of interdiffusion of atoms at electronic interfaces. An objective was the development of new ways to manipulate the transport and other properties of materials at nanoscale dimensions. In addition, the investigation developed striking evidence of the critical role of surface and bulk electronic structure, even in comparably simple 'free electron' metal thin films, in determining the direction and magnitude of ballistic electron transport in such materials.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 27, 1998
- Accession Number
- ADA337921
Entities
People
- R. A. Buhrman
Organizations
- Cornell University School of Applied and Engineering Physics