Damage Modes and Mechanisms of Si-Ge Films Under Prompt Soft X-Ray Radiation

Abstract

Thermal and residual stresses in films exposed to sudden temperature changes are analyzed based on an elastoplastic brittle idealization of film response. The results thus obtained are used to explain qualitatively the damage mechanisms of various failure modes observed in Si-Ge film deposited on a single crystal Si substrate exposed to soft x-ray radiation for a short duration of time.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
May 13, 1992
Accession Number
ADA338675

Entities

People

  • Dick J. Chang
  • Rokuro Muki
  • Sandra R. Gyetvay

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Air Platforms
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Climate Change
  • Engineering
  • Materials
  • Mechanics
  • Radiation
  • Residual Stress
  • Residuals
  • Single Crystals
  • Soft X Rays
  • Stress Strain Relations
  • Stresses
  • Substrates
  • Surface Temperature
  • Temperature Gradients
  • Tensile Strength
  • X Rays

Fields of Study

  • Physics

Readers

  • Solar Physics
  • Structural Health Monitoring of Composite Structures.
  • Thin Film Deposition Science.