Cubic Silicon Carbide (3C SiC): Growth and Properties of Single Crystals and Polycrystalline Layers Prepared by Thermal Decomposition of Methyltrichlorosilance in Hydrogen

Abstract

This report results from a contract tasking Russian Academy of Sciences as follows: Investigate the process of growing cubic silicon carbide from the vapor phase in the form of single crystals and polycrystalline layers that can be used for the production of various semiconducting devices and passive elements.

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Document Details

Document Type
Technical Report
Publication Date
Oct 07, 1994
Accession Number
ADA338896

Entities

People

  • Stanislov Gorin

Organizations

  • Russian Academy of Sciences

Tags

DTIC Thesaurus Topics

  • Air Force
  • Carbides
  • Ceramic Materials
  • Charge Carriers
  • Chemistry
  • Compound Semiconductors
  • Crystals
  • Decomposition
  • Elements
  • Flow Rate
  • High Temperature
  • Measurement
  • Optical Properties
  • Semiconductors
  • Silicon
  • Silicon Carbide
  • Single Crystals

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.