New World Vistas: Theory of Anion-Substituted Nitrogen Bearing III-V Alloys.

Abstract

Band structure calculations of dilute alloys of nitrogen-rich GaNP and GaNAs were performed. Because of the large bond-length mismatch between nitrogen (N) and phosphorous (P) or arsenic (As), enormous internal strains strongly inhibit the miscibility of the latter into the anion lattice. This report discusses the thermodynamic behavior of incorporation of P or As into the III-N lattice by calculating the miscibility gaps in the regular solution model. The band states show some remarkable behavior when small amounts of P or As are substituted for N; resonances at the valence band edge exhibit characteristics which are somewhere between that of a hydrogenic defect and a propagating state one usually finds at the band edge of an alloy.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1997
Accession Number
ADA339169

Entities

People

  • Van Schilfgaarde

Organizations

  • SRI International

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Elements
  • Energy Bands
  • Mobility
  • Nitrogen
  • Scattering
  • Semiconductors
  • Valence
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology