Final Technical Report for AFOSR Grant #F49620-97-1-0261

Abstract

Research conducted under AFOSR grant no. F49620-97-l-026l focused on exploring the properties of microdischarge devices fabricated in silicon. Cylindrical devices having diameters between 20 micrometers and 400 micrometers have been fabricated and intense emission on the B --> X transition of xenon monoiodide (XeI) in the ultraviolet (UV) is produced when mixtures of Xe/I2 are introduced to the discharge. Having specific power loadings beyond 100 kW-/cu cm on a continuous basis, these devices represent a new realm of discharge operation and are attractive candidates as lamps or for the decomposition of environmentally hazardous gases.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1998
Accession Number
ADA339185

Entities

People

  • James Gary Eden

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Abstracts
  • Classification
  • Computers
  • Demonstrations
  • Diameters
  • Emission
  • Engineering
  • Excitation
  • Fluorescence
  • Halides
  • Illinois
  • Micrometers
  • Partial Pressure
  • Patent Applications
  • Security
  • Transitions
  • X Band

Fields of Study

  • Physics

Readers

  • Aerospace Research.
  • Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.