Analysis of Ferroelectric Thin Films Grown by MOD Process

Abstract

The Army Research Laboratory (ARL) has performed ferroelectric characterization testing of thin film ferroelectric samples provided by Raytheon TI Systems (RTIS) for the DARPA (Defense Advanced Research Projects Agency) uncooled detector materials program. The samples measured at ARL, produced by the metal-organic decomposition (MOD) method, have hysteresis loop characteristics, remanant polarization, and dielectric constant and resistivity values commensurate with measurements made at RTlS. RTlS projections show that Ca- and Sn-doped samples should achieve a projected noise equivalent temperature difference (NETD) of 13.8 mK with 48.5-micrometers pixels and 26.5 mK with 50-micrometers pixels, respectively.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1998
Accession Number
ADA339255

Entities

People

  • Robert M. Hoffman
  • Wesley Tipton

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Contracts
  • Decomposition
  • Detectors
  • Dielectric Permittivity
  • Dissipation Factor
  • Electrical Properties
  • Ferroelectric Materials
  • Films
  • Hysteresis
  • Lead Titanates
  • Materials
  • Measurement
  • Military Research
  • Phase Diagrams
  • Piezoelectric Crystals
  • Polarization
  • Thin Films

Fields of Study

  • Physics

Readers

  • Image Processing and Computer Vision.
  • Military Science and Technology Research and Modernization.
  • Semiconductor Device Technology